THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT

摘要

A thin film transistor comprises an active layer (204), an etch stop layer (205), a source electrode (206) and a drain electrode (207). The active layer (204) comprises at least one first active portion (2041), a second active portion (2042) and a third active portion (2043), the second active portion (2042) and the third active portion (2043) being located on two sides of the first active portion (2041) and connected to the first active portion (2041). The at least one first active portion (2041) is overlaid with the etch stop layer (205), and the longitudinal width of the first active portion (2041) is smaller than that of the second active portion (2042) and/or the third active portion (2043). The second active portion (2042) and the third active portion (2043) are partially overlaid with a transverse extending portion of the etch stop layer (205) on the first active portion (2041). The second active portion (2042) forms side wing contact with one of the source electrode (206) and the drain electrode (207), and/or the third active portion (2043) forms side wing contact with the other of the source electrode (206) and the drain electrode (207).