PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS

摘要

Provided are a composition and a method for trimming of a photoresist pattern. The photoresist pattern trimming composition includes a matrix polymer including a unit formed from a monomer represented by general formula (I); an aromatic acid not containing fluorine; and a solvent. The composition and the method of the present invention have specific usability in manufacturing of a semiconductor device. Here, R_1 is selected from hydrogen, fluorine, C_1 to C_3 alkyl and C_1 to C_3 fluoroalkyl, R_2 is selected from C_1 to C_15 alkylene, and R_3 is selected from C_1 to C_3 fluoroalkyl.