| 摘要 |
The present invention addresses the problem of providing a stable polishing composition with which a sufficient polishing rate can be achieved, and which exhibits little change in performance even if used repeatedly. This polishing composition includes colloidal silica, a weak acid salt, and a quaternary ammonium compound, and is used to polish semiconductor wafers. The weak acid salt content is in the range of 1.0×10-7 to 1.0×10-5 mol/m2-SiO2 with respect to the total surface area of the colloidal silica. The quaternary ammonium compound content satisfies the relationship set forth in formula (1), namely Y0=A*X+B, and formula (2), namely -20≤(Y-Y0)/Y0≤100(%), with the caveat that, in the formulae, A represents the theoretical buffer ratio of the weak acid salt to the quaternary ammonium compound, B represents the amount of the quaternary ammonium compound which is adsorbed on the colloidal silica, and which is not free in the polishing composition, Y represents the quaternary ammonium compound content, Y0 represents the optimum amount of the quaternary ammonium compound, and X represents the weak acid salt content. |
