发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that allows stabilizing its operation and causing a transistor to operate at high speed.SOLUTION: A semiconductor device includes: a first field-effect transistor (S1) having a source connected to a reference potential node; a second field-effect transistor (S2) having a source connected to a drain of the first field-effect transistor and a gate connected to the source of the first field-effect transistor; a gate signal node (N1) receiving a gate signal; a first resistor (103) connected between the gate signal node and a gate of the first field-effect transistor; and a first capacitance (122) and a switch circuit (124) connected between a drain of the second field-effect transistor and the gate of the first field-effect transistor. The switch circuit is connected in series to the first capacitance.
申请公布号 JP2015128218(A) 申请公布日期 2015.07.09
申请号 JP20130272729 申请日期 2013.12.27
申请人 FUJITSU LTD 发明人 YONEZAWA YU;NAKAJIMA YOSHIYASU
分类号 H03K17/04;H03K17/16 主分类号 H03K17/04
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