THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a thin film transistor substrate and a method for manufacturing the same. The thin film transistor substrate includes a gate metal layer formed on a substrate; a gate insulating layer formed on the gate metal layer; a data metal layer formed on the gate insulating layer; a protective layer formed on the data metal layer; a buffer electrode formed on the protective layer; a passivation layer formed on the buffer electrode; and a transparent electrode formed on the passivation layer. The transparent electrode is connected to at least one of the gate metal layer and the data metal layer through the buffer electrode. According to the present invention, a contact error between the metal layer and the transparent electrode can be prevented by forming a buffer layer between the metal layer and the transparent electrode.