| 摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor device in which a metal film containing Cu is used in a transistor using an oxide semiconductor film, and to provide a method of manufacturing the semiconductor device.SOLUTION: A semiconductor device includes a transistor. The transistor includes: a first gate electrode layer; a first gate insulating film on the first gate electrode layer; an oxide semiconductor film overlapped with the first gate electrode layer on the first gate insulating film; a pair of electrode layers electrically connected to the oxide semiconductor film; a second gate insulating film on the oxide semiconductor film and the pair of electrode layers; and a second gate electrode layer overlapped with the oxide semiconductor film on the second gate insulating film. The pair of electrode layers include a Cu-X alloy film (X represents Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). |
