发明名称 SUBSTRATE PROCESS APPARATUS
摘要 <p>The present invention relates to a substrate processing apparatus comprising: a chamber to and from which a substrate is input and output on one side and which has a first space formed therein; an inner chamber which is disposed in the first space in the chamber and has a second space formed therein; a substrate support base which is disposed in the inner chamber and supports the substrate; and a gas injector which injects gas to the substrate support base, wherein the inner chamber includes a first body which is fixed to the upside in the chamber and a second body which is disposed on the downside of the first body and moves up and down, and the first body and the second body are coupled to form an isolation space to isolate the second space from the first space.</p>
申请公布号 KR20150079542(A) 申请公布日期 2015.07.08
申请号 KR20150090565 申请日期 2015.06.25
申请人 CHARM ENGINEERING CO., LTD. 发明人 CHO, GUK HYEONG
分类号 H01L21/205;H01L21/02 主分类号 H01L21/205
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