SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME

摘要

The subject to be resolved is to prevent a depleted layer from being formed on a shell of a semiconductor device in a silicon carbide MOSFET in which a trench gate is applied. The semiconductor device according to an embodiment of the present invention comprises: a current carrying area; a first n- type epi-layer arranged on a first area of a n+ type silicon carbide substrate including a terminating area which is arranged on both sides of the current carrying area; a p type epi-layer arranged on the first n- type epi-layer; a second n- type epi-layer arranged on the p type epi-layer; a first trench arranged on the current carrying area; a second trench arranged on the p type epi-layer; a gate insulation film arranged within the first trench; a gate electrode arranged on the gate insulating film; and a terminating insulation film arranged within the second trench. The side of the terminating insulation film is in contact with the p type epi-layer and the second n- epi-type layer.