| 摘要 |
<p>Provided is a plasma CVD device wherein it is possible to prevent the film quality of SiO2 films or SiOF films from deteriorating by using a raw material gas that does not contain hydrogen. The plasma CVD device is provided with: a vacuum chamber (1); a holding electrode (4) which is disposed within the vacuum chamber and holds a substrate (6) whereupon a film is to be formed; a counter electrode (3) which is disposed within the vacuum chamber and in a position facing the substrate that is held by the holding electrode; a high-frequency power supply (30) having a frequency of 2-100MHz and which is electrically connected to either the counter electrode or the holding electrode; a raw material gas supplying mechanism for supplying raw material gas into the vacuum chamber; an oxidizing gas supplying mechanism for supplying oxidizing gas into the vacuum chamber; and an exhaust mechanism for exhausting the vacuum chamber to a vacuum. The raw material gas comprises a Si material that does not contain hydrogen.</p> |
