发明名称 RETREATMENT METHOD FOR WAFER BACKGRINDING SILICON WASTES
摘要 <p>The present invention relates to a retreatment method of wafer backgrinding silicon waste, which is effectively applicable throughout the industry required for a silicon material such as a lithium ion secondary battery, as highly purifying waste silicon sludge generated during backgrinding wafer in a simple and economic manner. According to the present invention, provided is a retreatment method of wafer backgrinding silicon waste, which comprises: a solid dispersion step for dispersing waste silicon sludge in a solvent; a solid and liquid separating step for separating waste silicon sludge dispersed in the solvent into solid and liquid; and a drying step for drying solid treated in the high purification step.</p>
申请公布号 KR20150078566(A) 申请公布日期 2015.07.08
申请号 KR20130168040 申请日期 2013.12.31
申请人 INSTITUTE FOR ADVANCED ENGINEERING 发明人 JUNG, HANG CHUL;KONG, MAN SIK;JIN, YUN HO
分类号 C01B33/04;B09B3/00;C01B33/021 主分类号 C01B33/04
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