发明名称 フラットパネルX線イメージャ内のフォトダイオード及び他のセンサ構造、並びに薄膜電子工学を利用したフラットパネルX線イメージャ内のフォトダイオード及び他のセンサ構造のトポロジー均一性の改善方法
摘要 A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry. The surface inflection has a radius of curvature greater than one half micron.
申请公布号 JP5744861(B2) 申请公布日期 2015.07.08
申请号 JP20120516229 申请日期 2010.06.16
申请人 ザ、リージェンツ、オブ、ザ、ユニバーシティー、オブ、ミシガン 发明人 アントニューク, ラリー, イー.
分类号 H01L27/146;H01L27/144;H01L29/786;H01L31/08;H01L31/10 主分类号 H01L27/146
代理机构 代理人
主权项
地址