发明名称 |
フラットパネルX線イメージャ内のフォトダイオード及び他のセンサ構造、並びに薄膜電子工学を利用したフラットパネルX線イメージャ内のフォトダイオード及び他のセンサ構造のトポロジー均一性の改善方法 |
摘要 |
A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry. The surface inflection has a radius of curvature greater than one half micron. |
申请公布号 |
JP5744861(B2) |
申请公布日期 |
2015.07.08 |
申请号 |
JP20120516229 |
申请日期 |
2010.06.16 |
申请人 |
ザ、リージェンツ、オブ、ザ、ユニバーシティー、オブ、ミシガン |
发明人 |
アントニューク, ラリー, イー. |
分类号 |
H01L27/146;H01L27/144;H01L29/786;H01L31/08;H01L31/10 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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