发明名称 |
METHOD FOR PRODUCING SIC SINGLE CRYSTAL |
摘要 |
Provided is a method for producing an SiC single crystal, which is capable of greatly increasing the growth rate in a solution technique in comparison to conventional methods. A method for producing an SiC single crystal, wherein an SiC single crystal is grown by bringing a seed crystal substrate into contact with an Si-C solution that is put in a crucible and has a temperature gradient decreasing from the inside to the liquid level, and wherein the value of depth/inner diameter of the crucible is less than 1.71 and the temperature gradient of the Si-C solution from the liquid level to 10 mm below the liquid level is larger than 42°C/cm. |
申请公布号 |
EP2891732(A1) |
申请公布日期 |
2015.07.08 |
申请号 |
EP20130832833 |
申请日期 |
2013.08.12 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
KADO, MOTOHISA;KUSUNOKI, KAZUHIKO;KAMEI, KAZUHITO |
分类号 |
C30B29/36;C30B19/10 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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