发明名称 半導体レーザ構造体
摘要 <p>A III-V nitride blue laser diode (100) has an amplifier (116) region and a modulator (118) region. The amplifier region (116) has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser (100). This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and "drooping" of the light output. <IMAGE></p>
申请公布号 JP5747241(B2) 申请公布日期 2015.07.08
申请号 JP20090119394 申请日期 2009.05.18
申请人 发明人
分类号 H01S5/026;H01S5/323;H01S5/343 主分类号 H01S5/026
代理机构 代理人
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