| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the resistance of a gate electrode and a gate contact is reduced while reducing the manufacturing cost, and to provide a manufacturing method therefor. <P>SOLUTION: In the semiconductor device, at least the upper layer of a gate electrode 7 consists of a WSix film 72 as a second metal silicide film, the binding energy of a first metal (Ni) contained in an NiSi<SB POS="POST">2</SB>film 18 as a first metal silicide film and silicon is smaller than that of a second metal (W) contained in the WSix film 72 and silicon, and x is 1.5 or more and less than 2.0 in the composition MSix (M represents the second metal) of the WSix film 72. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
