发明名称 半導体装置
摘要 <p>A protection circuit is designed to operate when the level of a DC power supply potential which is generated in a rectifier circuit is equal to or greater than a predetermined level (a reference level), so as to decrease the level of the generated DC power supply potential. On the other hand, the protection circuit is designed not to operate when the DC power supply potential which is generated in the rectifier circuit is equal to or less than the predetermined level (the reference level), so as to use the generated DC power supply potential without change. A transistor of the protection circuit includes an oxide semiconductor layer, which enables a reduction in the off-state current of the transistor and a reduction in power consumption of the protection circuit.</p>
申请公布号 JP5745360(B2) 申请公布日期 2015.07.08
申请号 JP20110169031 申请日期 2011.08.02
申请人 发明人
分类号 G06K19/07;H01L21/822;H01L27/04;H01L29/786;H02M7/06 主分类号 G06K19/07
代理机构 代理人
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