| 摘要 |
In the present invention, described is an electrostatic discharge (ESD) protection device which is implemented by finFET technology. The device forms a planar region under an STI layer (120′) by forming extended regions (290,300) under the STI layer (120′) by allowing the movement of a drain implantation (240,250) with high doping by including a shallow trench isolation (STI) layer (120′) with a reduced thickness. The regions (290,300) are formed on an n-well layer (180) provided between a substrate (100) and the STI layer (120′). In the formation of the planar region under the STI layer (120′), a part of thermal energy generated in the device for the generation of ESD is generated under the STI layer and is efficiently exhausted to the substrate (100). |
