| 摘要 |
A microelectronic package comprising: a substrate (210); a first die (220) and a second die (260), both of which are embedded in the substrate, both of which have a front side (221, 261) and an opposing back side (222, 262), and both of which have at least one through-silicon-via (223, 263) therein; a plurality of build-up layers (230) adjacent to and built up over the front sides of the first and second dies; and an electrically conductive structure (240) adjacent to and in physical contact with the back sides of the first and second dies. |
