发明名称 |
RECYCLING SUBSTRATE STRUCTURE INCLUDING STRAIN COMPENSATION LAYER, MAKING METHOD THEREFOR AND DEVICE MANUFACTURING METHOD |
摘要 |
According to an aspect of the present invention, provided is a producing method of a substrate recycling structure comprising: a substrate preparation step of preparing a substrate; a sacrificial layer growth step of growing a sacrificial layer capable of growing the sacrificial layer having a different lattice constant with the substrate on the substrate; a compensation layer growth step of growing a compensation layer having an opposite tension state with a tension state between the substrate and the sacrificial layer on the sacrificial layer; a device layer forming step of growing a device layer on the compensation layer. According to the reviewed present invention, a device can be easily removed by growing the sacrificial layer thick. |
申请公布号 |
KR20150079271(A) |
申请公布日期 |
2015.07.08 |
申请号 |
KR20130169385 |
申请日期 |
2013.12.31 |
申请人 |
KOREA ADVANCED NANO FAB CENTER |
发明人 |
JUN, DONG HWAN;PARK, WON KYU |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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