发明名称 RECYCLING SUBSTRATE STRUCTURE INCLUDING STRAIN COMPENSATION LAYER, MAKING METHOD THEREFOR AND DEVICE MANUFACTURING METHOD
摘要 According to an aspect of the present invention, provided is a producing method of a substrate recycling structure comprising: a substrate preparation step of preparing a substrate; a sacrificial layer growth step of growing a sacrificial layer capable of growing the sacrificial layer having a different lattice constant with the substrate on the substrate; a compensation layer growth step of growing a compensation layer having an opposite tension state with a tension state between the substrate and the sacrificial layer on the sacrificial layer; a device layer forming step of growing a device layer on the compensation layer. According to the reviewed present invention, a device can be easily removed by growing the sacrificial layer thick.
申请公布号 KR20150079271(A) 申请公布日期 2015.07.08
申请号 KR20130169385 申请日期 2013.12.31
申请人 KOREA ADVANCED NANO FAB CENTER 发明人 JUN, DONG HWAN;PARK, WON KYU
分类号 H01L21/20 主分类号 H01L21/20
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