发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
In a nonvolatile memory device (4) provided in a semiconductor device, when data is erased based on a band-to-band tunneling scheme, supply of a boosted voltage to a memory cell (MC) to be erased is ended when a condition that an output voltage (VUCP) of a charge pump circuit (52) has recovered to a predetermined reference voltage is satisfied and additionally a condition that a predetermined reference time has elapsed since start of supply of the boosted voltage (VUCP) to the memory cell (MC) to be erased is satisfied. |
申请公布号 |
EP2892054(A1) |
申请公布日期 |
2015.07.08 |
申请号 |
EP20120883828 |
申请日期 |
2012.08.29 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
OGAWA, TOMOYA;ITO, TAKASHI;TOMOEDA, MITSUHIRO |
分类号 |
G11C16/06;G11C16/02;G11C16/14 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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