HIGH-VOLTAGE-RESISTANCE SEMICONDUCTOR DEVICE

摘要

A withstand voltage region is formed to surround a logic circuit formation region. A high-voltage MOSFET (71, 72) for level shifting is formed in part of the withstand voltage region. A p - opening region (131) is formed between a drain region of the high-voltage MOSFET (71, 72) and the logic circuit formation region. A shield layer (300) connected to the negative electrode side of a power supply connected to the logic circuit formation region is disposed on the p - opening region (131). Thus, it is possible to provide a high-voltage semiconductor device including a level shifting circuit capable of making stable operation during the switching of a high-voltage IC and with long-term reliability.