METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICES

摘要

The present invention relates to a method of manufacturing a nitride semiconductor device. Provided is a method of manufacturing a nitride semiconductor device which includes forming electrodes on a growth substrate where first and second nitride semiconductor layers are successively stacked, forming upper metal layers on each of the electrodes, exposing the lower surface of the first nitride semiconductor layer by removing the growth substrate, and forming a third nitride semiconductor layer and a lower metal layer on the lower surface of the exposed first nitride semiconductor layer.