METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND THE METHOD

摘要

An embodiment of the present invention relates to a metal oxide semiconductor field effect transistor and a method thereof. A metal oxide semiconductor field effect transistor according to the embodiment of the present invention includes a first semiconductor layer; a gate electrode arranged on the first semiconductor layer; a spacer arranged on one side and the other side of the gate electrode; and a source electrode and a drain electrode which are arranged on one side and the other side of the first semiconductor layer and are separated from each other. The width of the first semiconductor layer is larger than that of the gate electrode.