| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field-effect transistor having high reproducibility of transistor characteristics, high speed, and high power, and to provide a method of manufacturing the same. <P>SOLUTION: A field-effect transistor 10 comprises a diamond substrate 11, a second electrode 13 and a third electrode 14 that are formed apart from each other on one surface 11a side of the diamond substrate 11, and a first electrode 15 formed between the two electrodes 13 and 14 so as to be spaced apart from the electrodes. A group III nitride semiconductor layer 12 is provided between the first electrode 15 and the diamond substrate 11, and a hole conduction channel region 16 is formed in a region near an interface 17 between the diamond substrate 11 and the group III nitride semiconductor layer 12. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
