发明名称 |
Method for preventing short circuit between metal wires in organic light emitting diode display device |
摘要 |
Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming a metal layer including two metal wires on the inorganic layer; forming an organic layer on the two metal wires; forming an indium tin oxide layer on the organic layer; coating a photoresist layer; performing an exposure step by utilizing a photo mask having a transparent area, an opaque material disposed in the transparent area, wherein a width of the opaque material is less than a width of the transparent area; performing a development step to the photoresist layer; and performing an etching step to remove a part of the indium tin oxide layer and a part of the organic layer. The present invention can prevent the short circuit between the metal wires. |
申请公布号 |
US9076992(B2) |
申请公布日期 |
2015.07.07 |
申请号 |
US201314129992 |
申请日期 |
2013.11.28 |
申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Ko Kai-Yuan |
分类号 |
H01L27/32;H01L51/56 |
主分类号 |
H01L27/32 |
代理机构 |
JMB Davis Ben-David |
代理人 |
JMB Davis Ben-David |
主权项 |
1. A method for preventing a short circuit between metal wires in an organic light emitting diode display device, comprising:
forming an inorganic layer on a substrate; forming a metal layer on the inorganic layer, the metal layer comprising at least two metal wires; forming an organic layer on the two metal wires of the metal layer; forming an indium tin oxide layer on the organic layer; coating a photoresist layer; performing an exposure step to the photoresist layer by utilizing a photo mask, the photo mask having a transparent area corresponding to a position between the two metal wires, an opaque material disposed in the transparent area, wherein a width of the transparent area of the photo mask is a resolution of the photo mask, and a width of the opaque material is less than the width of the transparent area of the photo mask; performing a development step to the photoresist layer; and performing an etching step to remove a part of the indium tin oxide layer and a part of the organic layer. |
地址 |
Shenzhen CN |