发明名称 Method for preventing short circuit between metal wires in organic light emitting diode display device
摘要 Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming a metal layer including two metal wires on the inorganic layer; forming an organic layer on the two metal wires; forming an indium tin oxide layer on the organic layer; coating a photoresist layer; performing an exposure step by utilizing a photo mask having a transparent area, an opaque material disposed in the transparent area, wherein a width of the opaque material is less than a width of the transparent area; performing a development step to the photoresist layer; and performing an etching step to remove a part of the indium tin oxide layer and a part of the organic layer. The present invention can prevent the short circuit between the metal wires.
申请公布号 US9076992(B2) 申请公布日期 2015.07.07
申请号 US201314129992 申请日期 2013.11.28
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Ko Kai-Yuan
分类号 H01L27/32;H01L51/56 主分类号 H01L27/32
代理机构 JMB Davis Ben-David 代理人 JMB Davis Ben-David
主权项 1. A method for preventing a short circuit between metal wires in an organic light emitting diode display device, comprising: forming an inorganic layer on a substrate; forming a metal layer on the inorganic layer, the metal layer comprising at least two metal wires; forming an organic layer on the two metal wires of the metal layer; forming an indium tin oxide layer on the organic layer; coating a photoresist layer; performing an exposure step to the photoresist layer by utilizing a photo mask, the photo mask having a transparent area corresponding to a position between the two metal wires, an opaque material disposed in the transparent area, wherein a width of the transparent area of the photo mask is a resolution of the photo mask, and a width of the opaque material is less than the width of the transparent area of the photo mask; performing a development step to the photoresist layer; and performing an etching step to remove a part of the indium tin oxide layer and a part of the organic layer.
地址 Shenzhen CN