Method for depositing a thin layer and product thus obtained

摘要

One subject of the invention is a process for the treatment of at least one thin continuous film deposited on a first side of a substrate, characterized in that said at least one thin film is raised to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. on the opposite side of said substrate to said first side, so as to increase the degree of crystallization of said thin film while keeping it continuous and without a step of melting said thin film.;Another subject of the invention is the material that can be obtained by this process.

主权项

1. A process for increasing the degree of crystallization of at least one thin continuous film deposited on a first side of a substrate while keeping the film continuous and without melting the film, the process comprising:
heating the film with a laser, wherein at every point on said at least one thin film that is heated to a temperature of at least 30020 C. using a laser, the temperature at no point on the opposite side of said substrate to said first side exceeds 15020 C., thereby increasing the degree of crystallization of said thin film while keeping it continuous and without melting said thin film, wherein the laser simultaneously irradiates the entire width of the substrate, and wherein the thin film is based on at least one oxide selected from the group consisting of indium zinc oxide, indium tin oxide, gallium-doped zinc oxide, niobium-doped titanium oxide, cadmium stannate, zinc stannate, fluorine-doped tin oxide, antimony-doped tin oxide, and fluorine- and antimony-doped tin oxide and wherein the thin film does not contain a metallic functional layer.