FLATTENING APPARATUS AND METHOD OF A SILICON CARBIDE SUBSTRATE

摘要

To improve a surface roughness by processing the scratch of a substrate in the polishing process of an SiC substrate, provided is an apparatus for flattening the SiC substrate, which includes a polishing platen on which the surface of the SiC substrate is polished, a polishing head which mounts the SiC substrate and presses and closely attaches the SiC substrate on the polishing platen, and an abrasive supply line which is formed between the substrate and the polishing platen to supply abrasives. The abrasive supply line has a structure to supply a mixture of a diamond particle and a ceramic particle.