| 摘要 |
The present invention relates to a memory control circuit. According to the present invention, the memory control circuit comprises: a dropdown regulator for outputting a high level voltage to a writing protective terminal of a memory when receiving a first input voltage, and outputting a low level voltage to the reading protective terminal when receiving a second input voltage; and a zener diode for outputting a breakdown voltage to a VCC terminal of the memory when receiving the first input voltage, and outputting the second input voltage to the VCC terminal by receiving the second input voltage. |
