POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device which includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type which is formed on the upper side of the first semiconductor region, a gate trench which passes through from the second semiconductor region to a part of the first semiconductor region, a third semiconductor region which is formed on both sides of the gate trench and is formed on the inner side of the upper side of the second semiconductor region, and a device protection region which is formed on the third semiconductor region.