METHOD FOR FABRICATING STANDARD WAFER

摘要

A method for manufacturing a standard wafer according to the embodiment of the present invention includes the steps of: manufacturing a contamination solution of a preset density including a metal impurity; removing an oxide layer of a wafer edge part; attaching the contamination solution on the local area of the wafer edge part with a plurality of contamination bubbles; and naturally drying the contamination bubble. Therefore, the reliability of technology to measure and analyze the density of the metal impurity on the wafer edge part is improved by quantitatively generating the metal contamination with a target density on only the edge part of a silicon wafer.