发明名称 PHOTOSENSITIVE RESIN COMPOSITION, AND MANUFACTURING PROCESS FOR RESIST PATTERN
摘要 The present invention relates to a photosensitive resin composition including (A) an alkali soluble resin, (B) a compound having at least one ethylene-based unsaturated double bond in one molecule thereof, (C) a light radical polymerization initiator having a keto-type oxime ester, and (D) a compound represented by Chemical formula (1) or (2). A content (weight) of the light radical polymerization initiator (C) is 0.5-5 times of a content (weight) of the compound (D). A content of the light radical polymerization initiator (C) is 3-20 parts by weight with respect to 100 parts by weight of the compound (B). In Chemical formula (1), Six units of R^1 are independently a hydrogen atom or an electron donating group and n is 0 or 1. In the Chemical formula (2), six units of R^2 are independently a hydrogen atom or an electron donating group and m is 0 or 1. When the photosensitive resin composition and a method for forming a photoresist pattern are used, the resist pattern with high resolution can be formed even without using an oxygen inhibition layer.
申请公布号 KR20150077289(A) 申请公布日期 2015.07.07
申请号 KR20140161657 申请日期 2014.11.19
申请人 JSR CORPORATION 发明人 AKIMARU HISANORI;SAKAKIBARA HIROKAZU;ISHIKAWA HIDEFUMI;NARUSE SHINGO
分类号 G03F7/028;G03F7/027 主分类号 G03F7/028
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