IN-GA-ZN BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for manufacturing an indium-gallium-zinc-based sputtering target is disclosed. The method for manufacturing an indium-gallium-zinc-based sputtering target according to the present invention comprises the steps of: preparing the powder of indium nitrate, gallium nitrate and zinc nitrate in a molar ratio of 0.8-1.2 : 0.8-1.2 : 10-20 and primarily pulverizing the same; secondarily pulverizing the primarily pulverized powder by adding acetone; generating a fluoride by adding a hydrofluoric acid to the solution of acetone; and drying and sintering the fluoride.