High electron mobility transistor

摘要

According to example embodiments, a high electron mobility transistor includes: a channel layer including a 2-dimensional electron gas (2DEG); a contact layer on the channel layer; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and source and drain electrodes on at least one of the channel layer, the contact layer, and the channel supply layer. The contact layer is configured to form an ohmic contact on the channel layer. The contact layer is n-type doped and contains a Group III-V compound semiconductor. The source electrode and the drain electrode are spaced apart from opposite sides of the gate electrode.

主权项

1. A high electron mobility transistor (HEMT) comprising:
a channel layer comprising a 2-dimensional electron gas (2DEG); a contact layer on the channel layer,
the contact layer configured to form an ohmic contact on the channel layer,the contact layer being n-type doped, andthe contact layer containing a Group III-V compound semiconductor; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and a source electrode and a drain electrode on at least one of the channel layer, the contact layer, and the channel supply layer,
the source electrode and the drain electrode being spaced apart from opposite sides of the gate electrode.