POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device which includes: a first semiconductor region of a first conductive type; a resurf region which is formed on the first semiconductor region and on which a second semiconductor region of the first conductive type and a third semiconductor region of a second conductive type are alternatively formed in a width direction; a first cover region of the first conductive type which is formed on the first semiconductor region, is in contact with the upper side of the resurf region, and has an impurity concentration which is higher than the impurity concentration of the first semiconductor region; a fourth semiconductor region of the second conductive type which is formed on the upper side of the first semiconductor region; a fifth semiconductor region of the first conductive type which is formed on the inner side of the upper side of the fourth semiconductor region; and a trench gate which passes through from the fifth semiconductor region to a part of the upper side of the first semiconductor region and includes a gate insulation layer formed on a surface thereof and a conductive material filled inside.