Residue removal from singulated die sidewall

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits;
patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits;plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits; andsubsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits, wherein removing the etch residue comprises using a plasma cleaning process selected from the group consisting of an O2 plasma cleaning process, an Ar/O2 plasma cleaning process, a forming gas (H2/N2) plasma cleaning process, an Ar/O)2/SF6 plasma cleaning process, a CF4/SF6 plasma cleaning process, and a combination of two or more thereof.