Power semiconductor device and method of manufacturing the same

摘要

Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

主权项

1. A power semiconductor device, comprising:
a first conductive type drift layer; a first conductive type diffusion layer disposed on the first conductive type drift layer and having a higher doping concentration than the first conductive type drift layer; a second conductive type well layer disposed on the first conductive type diffusion layer; one or more trenches penetrating the first conductive type diffusion layer and the second conductive type well layer; and a first electrode formed in the trench, wherein the first conductive type diffusion layer has a maximum doping concentration around a horizontal midline of the first conductive type diffusion layer.