Scaling of bipolar transistors

摘要

Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.

主权项

1. A method, comprising:
forming a trench in substrate, and filling said trench with dielectric material to form trench isolation surrounding and abutting a perimeter of a collector in said substrate; forming a base on said collector; forming an emitter in said base; removing all or a portion of said dielectric material from said trench; and forming a dielectric capping layer on exposed regions of said substrate, said base and said emitter and over said trench, said capping layer sealing an upper region of said trench and forming a void around said perimeter of said collector.