Semiconductor device and manufacturing method thereof

摘要

In a manufacturing method of a barrier layer, a via hole is formed in an insulating layer that covers a conductive layer over a substrate, and then the barrier layer is formed in the via hole. The barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film. The second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film.

主权项

1. A semiconductor device comprising:
a conductive layer over a substrate; an insulating layer covering the conductive layer; a titanium film concealing at least a part of the conductive layer and covering a top surface of the insulating layer while not covering a side surface of the insulating layer in a via hole; a first titanium nitride film including first and second portions, the first portion concealing the titanium film over the part of the conductive layer, the second portion extending along the side surface of the insulating layer in the via hole, the via hole being formed in the insulating layer exposing the part of the conductive layer, the first and second portions of the first titanium nitride film having different thicknesses; a second titanium nitride film covering the first titanium nitride film at an upper part of the via hole; and a conductive plug filling in the via hole through a barrier layer that includes the titanium film, the first titanium nitride film and the second titanium nitride film.