发明名称 |
METHOD OF FABRICATING ARRAY SUBSTRATE |
摘要 |
<p>The present invention relates to a method for manufacturing an array substrate. The present invention provides the method for manufacturing the array substrate which includes the steps of: forming a semiconductor layer of polysilicon; forming a gate insulation layer; forming a first metal layer; forming a first photoresist pattern; forming a gate electrode; forming an ohmic region on the semiconductor layer of the polysilicon and forming a part corresponding to the photoresist pattern with the first width as an active region at the same time; forming a second width which is equal to the gate electrode by contracting the first width of the first photoresist pattern; exposing the gate electrode by removing the first photoresist pattern with the second width; and forming a preset layer of the active region exposed to the outside of the gate electrode as an LDD region; forming an interlayer dielectric layer; and forming a source electrode and a drain electrode which are separated.</p> |
申请公布号 |
KR20150077165(A) |
申请公布日期 |
2015.07.07 |
申请号 |
KR20130166079 |
申请日期 |
2013.12.27 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
NOH, SANG SOON;RYU, WON SANG |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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