Semiconductor device and method of manufacturing the same

摘要

According to one embodiment, there is provided a semiconductor device using graphene, includes a catalyst layer formed on or in a substrate along with an interconnect pattern and a graphene layer formed on the catalyst layer. The graphene layer is arranged parallel to a narrower linewidth than the width of the interconnect pattern.

主权项

1. A semiconductor device, comprising:
a catalyst layer formed on or in a substrate along with an interconnect pattern; and a plurality of graphene layers formed on the catalyst layer, the plurality of graphene layers arranged in parallel in a narrower linewidth than a width of the interconnect pattern.