Method and device for self-aligned contact on a non-recessed metal gate

摘要

A methodology for forming a self-aligned contact (SAC) that exhibits reduced likelihood of a contact-to-gate short circuit failure and the resulting device are disclosed. Embodiments may include forming a replacement metal gate, with spacers at opposite sides thereof, on a substrate, forming a recess in an upper surface of the spacers along outer edges of the replacement metal gate, and forming an aluminum nitride (AlN) cap over the metal gate and in the recess.

主权项

1. A method comprising:
forming a replacement metal gate, with spacers at opposite sides thereof and a barrier layer adjacent the spacers, on a substrate; forming a recess that penetrates an upper surface of the spacers, between an outer edge of the spacers and the barrier layer, and along outer edges of the replacement metal gate; and forming an aluminum nitride (AlN) cap over the metal gate and in the recess between the spacers and barrier layer.