Semiconductor device, semiconductor device unit, active matrix substrate, liquid crystal panel, and liquid crystal display

摘要

A semiconductor device (10) provided with at least a plurality of transistors and bootstrap capacitors (Ca1 and Cb1), the semiconductor device (10) includes: a semiconductor layer (22) made of the same material as a channel layer of each of the transistors; a capacitor electrode (24) formed in an upper layer of the semiconductor layer (22); and a clock signal line (17) formed in an upper layer of the capacitor electrode (24), the capacitor electrode (24) being connected to a gate electrode of each of the transistors, the clock signal line (17) being supplied with a clock signal (CK) from outside the semiconductor device (10), the capacitors (Ca1 and Cb1) each being formed in an overlap section where the semiconductor layer (22), the gate insulating film (23) and the capacitor electrode (24) overlap one another, the overlap section and the clock signal line (17) overlapping each other when viewed from above.

主权项

1. A semiconductor device unit including at least a plurality of transistors, a first bootstrap capacitor, and a second bootstrap capacitor, the semiconductor device unit comprising:
a first semiconductor device and a second semiconductor device which are aligned along a vertical direction; and a first control signal line, a second control signal line, a first power supply line, and a second power supply line each extending in the vertical direction; wherein the first semiconductor device includes: a first electrode made of a material that is the same as a material of a channel layer of each of the plurality of transistors; a second electrode formed in an upper layer of the first electrode; and a first insulating film provided between the first electrode and the second electrode; the second semiconductor device includes: a third electrode made of a material that is the same as the material of the channel layer of each of the plurality of transistors; a fourth electrode formed in an upper layer of the third electrode; and a second insulating film provided between the third electrode and the fourth electrode; the second electrode and the fourth electrode are each connected to a gate electrode of corresponding ones of the plurality of transistors; the first control signal line and the second control signal line are each supplied with a control signal from outside the semiconductor device unit; the first bootstrap capacitor is formed in a first overlap section where the first electrode, the first insulating film and the second electrode overlap one another; the second bootstrap capacitor is formed in a second overlap section where the third electrode, the second insulating film, and the fourth electrode overlap one another; the first control signal line is formed in an upper layer of the second electrode; a third insulating film is provided between the first control signal line and the second electrode; the second control signal line is formed in an upper layer of the fourth electrode; a fourth insulating film is provided between the second control signal line and the fourth electrode; and the first overlap section covers the first power supply line and the first control signal line in a bottom view, and the second overlap section covers the second power supply line and the second control signal line in the bottom view.