发明名称 CMOS-compatible silicon nano-wire sensors with biochemical and cellular interfaces
摘要 The systems and methods described herein include a sensor for suitable for sensing chemical and biological substances. The sensor comprises a semiconductor layer formed in or on a substrate and a channel having nano-scale dimensions formed in the semiconductor layer, where the structure creates an electrically conducting pathway between a first contact and a second contact on the semiconductor layer. In certain preferred embodiments, the nano-scale channel has a trapezoidal cross-section with an effective width and exposed lateral faces, where the effective width is selected to have same order of magnitude as a Debye length (LD) of the semiconductor material of which the semiconductor layer is formed.
申请公布号 US9076665(B2) 申请公布日期 2015.07.07
申请号 US200712517230 申请日期 2007.12.06
申请人 Yale University 发明人 Stern Eric D.;Fahmy Tarek M.;Reed Mark A.;Klemic James F.
分类号 G01N27/414;H01L29/06;B82Y10/00;H01L29/04;H01L29/16 主分类号 G01N27/414
代理机构 Pabst Patent Group LLP 代理人 Pabst Patent Group LLP
主权项 1. A sensor comprising: a semiconductor layer formed in or on a substrate; and a selectively functionalized channel having nano-scale cross-sectional dimensions etched from the semiconductor layer and forming an electrically conducting pathway between at least a first and second contact, said nano-scale channel having at least one exposed lateral face, wherein only the exposed lateral face or faces is functionalized.
地址 New Haven CT US