发明名称 |
CMOS-compatible silicon nano-wire sensors with biochemical and cellular interfaces |
摘要 |
The systems and methods described herein include a sensor for suitable for sensing chemical and biological substances. The sensor comprises a semiconductor layer formed in or on a substrate and a channel having nano-scale dimensions formed in the semiconductor layer, where the structure creates an electrically conducting pathway between a first contact and a second contact on the semiconductor layer. In certain preferred embodiments, the nano-scale channel has a trapezoidal cross-section with an effective width and exposed lateral faces, where the effective width is selected to have same order of magnitude as a Debye length (LD) of the semiconductor material of which the semiconductor layer is formed. |
申请公布号 |
US9076665(B2) |
申请公布日期 |
2015.07.07 |
申请号 |
US200712517230 |
申请日期 |
2007.12.06 |
申请人 |
Yale University |
发明人 |
Stern Eric D.;Fahmy Tarek M.;Reed Mark A.;Klemic James F. |
分类号 |
G01N27/414;H01L29/06;B82Y10/00;H01L29/04;H01L29/16 |
主分类号 |
G01N27/414 |
代理机构 |
Pabst Patent Group LLP |
代理人 |
Pabst Patent Group LLP |
主权项 |
1. A sensor comprising:
a semiconductor layer formed in or on a substrate; and a selectively functionalized channel having nano-scale cross-sectional dimensions etched from the semiconductor layer and forming an electrically conducting pathway between at least a first and second contact, said nano-scale channel having at least one exposed lateral face, wherein only the exposed lateral face or faces is functionalized. |
地址 |
New Haven CT US |