发明名称 Semiconductor device
摘要 A semiconductor device has: a power supply line; a ground line; a signal line for transmitting a signal; a signal pad connected to the signal line; a protection element connected between the signal line and the ground line; and a trigger circuit configured to supply a trigger current to the protection element. The trigger circuit has: a PMOS transistor whose gate and backgate are connected to the power supply line and whose source is connected to the protection element; and an amplifier circuit part configured to amplify a first current flowing through the PMOS transistor to generate a second current. The trigger current includes the second current.
申请公布号 US9076654(B2) 申请公布日期 2015.07.07
申请号 US201213552345 申请日期 2012.07.18
申请人 Renesas Electronics Corporation 发明人 Okushima Mototsugu
分类号 H02H9/04;H01L27/02 主分类号 H02H9/04
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A semiconductor device comprising: a power supply line; a ground line; a signal line; a signal pad coupled to said signal line; a thyristor coupled between said signal line and said ground line; and a trigger circuit configured to be coupled to said thyristor, wherein said trigger circuit comprises: a PMOS transistor whose gate and backgate are coupled to said power supply line and whose source is coupled to a gate of said thyristor;a first resistor element coupled between a drain of said PMOS transistor and said ground line; anda first NMOS transistor whose drain is coupled to said gate of said thyristor, whose source is coupled to said ground line, whose gate is coupled to said drain of said PMOS transistor, and whose backgate is directly coupled to said ground line.
地址 Kanagawa JP