Method for manufacturing a solid-state imaging apparatus

摘要

Certain embodiments provide a solid-state imaging apparatus including a first impurity layer, a second impurity layer, a third impurity layer, and an electrode. The first impurity layer is a photoelectric conversion layer, and is formed to have a constant depth on a semiconductor substrate. The second impurity layer is formed on a surface of the first impurity layer, to have a depth which becomes shallower toward a direction from the first impurity layer to the third impurity layer. The third impurity layer is formed in a position spaced apart from the first impurity layer and the second impurity layer on the surface of the semiconductor substrate. The electrode can transport electric charges from the first impurity layer to the third impurity layer, and is formed between the second impurity layer and the third impurity layer, on the surface of the semiconductor substrate.

主权项

1. A method for manufacturing a solid-state imaging apparatus, comprising:
forming a first impurity layer having a constant depth on a semiconductor substrate, by implanting ions thereto once; forming a resist layer including a concave portion having a thickness which becomes thicker toward a predetermined direction in such a manner that the concave portion is arranged on the first impurity layer, on a surface of the semiconductor substrate; forming a second impurity layer having a depth which becomes shallower in the predetermined direction, by implanting ions to a surface of the first impurity layer through the resist layer; forming a third impurity layer to which electric charges generated by irradiating light to the first impurity layer, in a position spaced apart from the first impurity layer and the second impurity layer; and forming an electrode which reads the electric charges generated in the first impurity layer and transports the read charges to the third impurity layer, in a position between the second impurity layer and the third impurity layer, on a front surface of the semiconductor substrate, and the predetermined directions of the concave portion of the resist layer and the second impurity layer are a direction from the first impurity layer to the third impurity layer.