Semiconductor device

摘要

The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.

主权项

1. A semiconductor device comprising:
a first transistor comprising a gate electrode; a first insulating layer comprising an opening, wherein the gate electrode of the first transistor is positioned in the opening; a second transistor comprising:
an oxide semiconductor layer on the first insulating layer;a first conductive layer and a second conductive layer over the oxide semiconductor layer;a second insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; anda gate electrode over the second insulating layer and overlapping with the oxide semiconductor layer a switching element electrically connected the second conductive layer; and a driver circuit electrically connected to the second conductive layer through the switching element, wherein the oxide semiconductor layer comprises indium and zinc, wherein the first conductive layer is in contact with the surface of the gate electrode of the first transistor and the first insulating layer.