| 发明名称 | Fin-JFET | ||
| 摘要 | Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate. | ||
| 申请公布号 | US9076662(B2) | 申请公布日期 | 2015.07.07 |
| 申请号 | US201313960574 | 申请日期 | 2013.08.06 |
| 申请人 | Micron Technology, Inc. | 发明人 | El-Kareh Badih;Forbes Leonard |
| 分类号 | H01L29/66;H01L27/06;H01L29/78;H01L21/8232;H01L21/84;H01L27/085;H01L27/092;H01L27/098;H01L27/12;H01L29/808 | 主分类号 | H01L29/66 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A system on a chip, comprising: at least one analog circuit component having a Fin-JFET; digital circuit components including a processor and a memory device coupled to the processor; and wherein at least one digital circuit component has a Fin-MOSFET, and the Fin-JFET and the Fin-MOSFET are formed on a common substrate according to a CMOS process, and wherein a Fin structure associated with the Fin-MOSFET has a length different than a length of a Fin structure associated with the Fin-JFET. | ||
| 地址 | Boise ID US | ||