| 摘要 |
The purpose of the present invention is to increase controllability of a composition ratio and film properties when forming a thin film. A method for manufacturing a semiconductor device performs a cycle including a process of forming a first film including at least a small amount of elements, boron, and nitrogen, and not containing borazine ring structure, and a process of forming a second film including at least a small amount of elements and borazine ring structure several times, and forms a laminate film in which the first film and the second film are arranged in layers on a substrate. |
