POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device which includes an active region in which a current flows through a channel formed on an on-operation, an end region which is formed around the active region, a plurality of first trenches which are formed on the active region and include insulation layers formed on the surfaces thereof and conductive materials filled inside, and a plurality of trenches which are formed on the end region and include the insulation layers formed on the surfaces thereof and the conductive materials filled inside.