| 摘要 |
<p>Disclosed are a method for growing an epitaxial layer with a low threading dislocation density and a light emitting diode manufactured by using the same. The light emitting diode includes a substrate which includes protrusion parts and a bottom surface between the protrusion parts on a surface thereof, and GaN epitaxial layers which are grown on the substrate. Also, the epitaxial layers include threading dislocation transfer preventing layers between the bottom surface and a position which is 0.5um higher than the protrusion parts. The threading dislocation transfer preventing layer prevents the threading dislocation from being vertically transferred by suppressing or refracting the progressing direction of the threading dislocation. Thereby, the threading dislocation density on the semiconductor layers grown on the threading dislocation preventing layer is reduced.</p> |
