发明名称 High voltage LED with improved heat dissipation and light extraction
摘要 A lighting apparatus includes a polygon die including a plurality of light-emitting diodes (LEDs), and a submount to which each of the LEDs is coupled. Each LED includes a plurality of epi-layers which contains a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer, and a p-type electrode and an n-type electrode which are electrically coupled to the p-type layer and the n-type layer, respectively. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series. At least some of the plurality of LEDs have non-rectangular top view shapes.
申请公布号 US9076950(B2) 申请公布日期 2015.07.07
申请号 US201313790092 申请日期 2013.03.08
申请人 TSMC SOLID STATE LIGHTING LTD. 发明人 Chen Kuan-Chun;Kuo Hao-Chung;Lin You-Da;Li Zhen-Yu
分类号 H01L33/64;F21V21/00;H01L25/075;F21S6/00;F21V3/04;F21V7/22;F21Y101/02;F21Y105/00;F21V29/74;F21V29/89 主分类号 H01L33/64
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A lighting apparatus, comprising: a polygon die including a plurality of light-emitting diodes (LEDs), and wherein each LED includes: a plurality of epi-layers, the epi-layers containing a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer; anda p-type electrode and an n-type electrode electrically coupled to the p-type layer and the n-type layer, respectively; and a submount to which each of the LEDs is coupled, wherein the p-type and the n-type electrodes are located between the submount and the epi-layers, wherein the submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series, and wherein at least some of the plurality of LEDs have non-rectangular top view shapes.
地址 Hsinchu TW